Mounting Type:
Memory Format:
Memory Interface:
Write Cycle Time - Word, Page:
Image Part Manufacturer Description Stock Action
EDB4432BBBJ-1D-F-R Micron Technology Inc
IC DRAM 4G PARALL...
5,000
In-stock
EDB4432BBPA-1D-F-R TR Micron Technology Inc
IC DRAM 4G PARALL...
5,000
In-stock
EDB4432BBPA-1D-F-D Micron Technology Inc
IC DRAM 4G PARALL...
5,000
In-stock
MT53E128M32D2DS-053 AIT:A Micron Technology Inc
IC DRAM LPDDR4 WF...
5,000
In-stock
MT53E128M32D2DS-046 AIT:A Micron Technology Inc
IC DRAM LPDDR4 WF...
5,000
In-stock
MT53B128M32D1NP-062 AIT:A Micron Technology Inc
IC DRAM 4G 1600MHZ
5,000
In-stock
EDB4432BBBJ-1D-F-D Micron Technology Inc
IC DRAM 4G PARALL...
5,000
In-stock
MT53E128M32D2DS-053 AIT:A TR Micron Technology Inc
IC DRAM LPDDR4 WF...
5,000
In-stock
MT53E128M32D2DS-046 AIT:A TR Micron Technology Inc
IC DRAM LPDDR4 WF...
5,000
In-stock
MT53B128M32D1NP-062 AIT:A TR Micron Technology Inc
IC DRAM 4G 1600MHZ
5,000
In-stock
MT53B128M32D1DS-062 AIT:A TR Micron Technology Inc
IC DRAM 4G 1600MHZ
5,000
In-stock
MT53B128M32D1DS-062 AIT:A Micron Technology Inc
IC DRAM 4G 1600MHZ
342
In-stock
AS4C128M32MD2A-18BIN Alliance Memory, Inc.
IC DRAM 4G PARALL...
79
In-stock
AS4C128M32MD2A-25BIN Alliance Memory, Inc.
IC DRAM 4G PARALL...
36
In-stock
EDB4432BBBJ-1DAAT-F-D Micron Technology Inc
IC DRAM 4G PARALL...
5,000
In-stock
AS4C128M32MD2A-18BINTR Alliance Memory, Inc.
IC DRAM 4G PARALL...
5,000
In-stock
EDB4432BBBJ-1DAIT-F-R TR Micron Technology Inc
IC DRAM 4G PARALL...
5,000
In-stock
MT53E128M32D2DS-053 WT:A Micron Technology Inc
IC DRAM LPDDR4 WF...
5,000
In-stock
MT53E128M32D2DS-046 WT:A Micron Technology Inc
IC DRAM LPDDR4 WF...
5,000
In-stock
MT53B128M32D1NP-062 WT:A Micron Technology Inc
IC DRAM 4G 1600MHZ
5,000
In-stock
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