| US1K |
SEMIKRON |
60,000 |
Integrated Circuit |
| US1K M2G |
Taiwan Semiconductor |
5,000 |
DIODE GEN PURP 800V 1A DO214AC |
| US1K R3G |
Taiwan Semiconductor |
1,800 |
DIODE GEN PURP 800V 1A DO214AC |
| US1K R3G |
Taiwan Semiconductor |
2,908 |
DIODE GEN PURP 800V 1A DO214AC |
| US1K R3G |
Taiwan Semiconductor |
2,908 |
DIODE GEN PURP 800V 1A DO214AC |
| US1K-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 800V 1A SMA |
| US1K-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 800V 1A SMA |
| US1K-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 800V 1A SMA |
| US1K-13-F |
Diodes Incorporated |
10,000 |
DIODE GEN PURP 800V 1A SMA |
| US1K-13-F |
Diodes Incorporated |
11,479 |
DIODE GEN PURP 800V 1A SMA |
| US1K-13-F |
Diodes Incorporated |
11,479 |
DIODE GEN PURP 800V 1A SMA |
| US1K-E3/5AT |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE GEN PURP 800V 1A DO214AC |
| US1K-E3/5AT |
Vishay Semiconductor/Diodes Division |
7,284 |
DIODE GEN PURP 800V 1A DO214AC |
| US1K-E3/5AT |
Vishay Semiconductor/Diodes Division |
7,284 |
DIODE GEN PURP 800V 1A DO214AC |
| US1K-E3/61T |
Vishay Semiconductor/Diodes Division |
14,400 |
DIODE GEN PURP 800V 1A DO214AC |
