HS1JL MQG
- Manufacturer
- Taiwan Semiconductor
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 600V 1A SUB SMA
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 15pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5µA @ 600V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-219AB
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 75ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- Sub SMA
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7V @ 1A
- Datasheet :
- HS1JL MQG
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HS1J M2G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A DO214AC |
| HS1J R3G | Taiwan Semiconductor | 3,600 | DIODE GEN PURP 600V 1A DO214AC |
| HS1J R3G | Taiwan Semiconductor | 3,600 | DIODE GEN PURP 600V 1A DO214AC |
| HS1J R3G | Taiwan Semiconductor | 3,600 | DIODE GEN PURP 600V 1A DO214AC |
| HS1JFL | Taiwan Semiconductor | 3,000 | 75NS 1A 600V HIGH EFFICIENT RECO |
| HS1JFL | Taiwan Semiconductor | 5,040 | 75NS 1A 600V HIGH EFFICIENT RECO |
| HS1JFL | Taiwan Semiconductor | 5,040 | 75NS 1A 600V HIGH EFFICIENT RECO |
| HS1JL M2G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A SUB SMA |
| HS1JL MHG | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A SUB SMA |
| HS1JL MTG | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A SUB SMA |
| HS1JL R3G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A SUB SMA |
| HS1JL RFG | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A SUB SMA |
| HS1JL RHG | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A SUB SMA |
| HS1JL RQG | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A SUB SMA |
| HS1JL RTG | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 1A SUB SMA |