2N3507AU4

Manufacturer
Microsemi Corporation
Product Category
Transistors - Bipolar (BJT) - Single
Description
NPN TRANSISTOR
Manufacturer :
Microsemi Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
3A
Current - Collector Cutoff (Max) :
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 1.5A, 2V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Operating Temperature :
-65°C ~ 200°C (TJ)
Package / Case :
3-SMD, No Lead
Packaging :
Bulk
Part Status :
Active
Power - Max :
1W
Series :
Military, MIL-PRF-19500/349
Supplier Device Package :
U4
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 250mA, 2.5A
Voltage - Collector Emitter Breakdown (Max) :
50V
Datasheet :
2N3507AU4

Manufacturer related products

  • Microsemi Corporation
    MMIC ATTENUATOR DIE
  • Microsemi Corporation
    MMIC ATTENUATOR DIE
  • Microsemi Corporation
    RF ATTENUATOR 50OHM
  • Microsemi Corporation
    RF ATTENUATOR 17DB 50OHM
  • Microsemi Corporation
    IC MAC DUAL 10G XAUI MAC FCBGA

Catalog related products

related products

Part Manufacturer Stock Description
2N3500 Microsemi Corporation 80 TRANS NPN 150V 0.3A TO-39
2N3500L Microsemi Corporation 5,000 NPN POWER SILICON TRANSISTORS
2N3501 Microsemi Corporation 1 TRANS NPN 150V 0.3A TO-39
2N3501 MOT 50,000 Integrated Circuit
2N3501 PBFREE Central Semiconductor 96 TRANS NPN 150V 0.3A TO-39
2N3501L Microsemi Corporation 5,000 TRANS NPN 150V 0.3A TO-5
2N3501UB Microsemi Corporation 5,000 TRANS NPN 150V 0.3A
2N3506A Microsemi Corporation 5,000 NPN POWER SILICON TRANSISTORS
2N3506AL Microsemi Corporation 5,000 NPN POWER SILICON TRANSISTORS
2N3506JANTX MSC 50,000 Integrated Circuit
2N3506L Microsemi Corporation 5,000 NPN POWER SILICON TRANSISTORS
2N3507 Microsemi Corporation 5,000 NPN POWER SILICON TRANSISTORS
2N3507AL Microsemi Corporation 5,000 NPN POWER SILICON TRANSISTORS
2N3507L Microsemi Corporation 5,000 NPN POWER SILICON TRANSISTORS
2N3507U4 Microsemi Corporation 5,000 NPN POWER SILICON TRANSISTORS