IPD80R1K0CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.7A (Tc)

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Digi-Reel®

Part Status :

Active

Power Dissipation (Max) :

83W (Tc)

Rds On (Max) @ Id, Vgs :

950mOhm @ 3.6A, 10V

Series :

CoolMOS™ CE

Supplier Device Package :

PG-TO252-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.9V @ 250µA