TK56E12N1,S1X

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

56A (Ta)

Drain to Source Voltage (Vdss) :

120V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 60V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

168W (Tc)

Rds On (Max) @ Id, Vgs :

7mOhm @ 28A, 10V

Series :

U-MOSVIII-H

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA