SIA411DJ-T1-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SC-70-6

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

3.5W (Ta), 19W (Tc)

Rds On (Max) @ Id, Vgs :

30mOhm @ 5.9A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

PowerPAK® SC-70-6 Single

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA