EDB4432BBPE-1D-F-D
- Manufacturer :
- Micron Technology Inc
- Product Category :
- Memory
- Clock Frequency :
- 533MHz
- Memory Format :
- DRAM
- Memory Interface :
- Parallel
- Memory Size :
- 4Gb (128M x 32)
- Memory Type :
- Volatile
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -30°C ~ 85°C (TC)
- Package / Case :
- -
- Packaging :
- Tray
- Part Status :
- Active
- Series :
- -
- Supplier Device Package :
- -
- Technology :
- SDRAM - Mobile LPDDR2
- Voltage - Supply :
- 1.14V ~ 1.95V
- Write Cycle Time - Word, Page :
- -
- Datasheets
- EDB4432BBPE-1D-F-D
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| EDB4064B3PB-8D-F-D | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 216FBGA |
| EDB4064B3PD-8D-F-D | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 240FBGA |
| EDB4064B3PP-1D-F-D | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 240FBGA |
| EDB4064B4PB-1D-F-D | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 216WFBGA |
| EDB4064B4PB-1D-F-R TR | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 216WFBGA |
| EDB4064B4PB-1DIT-F-D | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 533MHZ |
| EDB4064B4PB-1DIT-F-D TR | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 533MHZ |
| EDB4064B4PB-1DIT-F-R | Micron Technology Inc | 1,000 | IC DRAM 4G PARALLEL 216WFBGA |
| EDB4064B4PB-1DIT-F-R TR | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 216WFBGA |
| EDB4416BBBH-1DIT-F-D | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 134FBGA |
| EDB4416BBBH-1DIT-F-R | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 533MHZ |
| EDB4416BBBH-1DIT-F-R TR | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 134FBGA |
| EDB4432BBBH-1D-F-D | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 134FBGA |
| EDB4432BBBH-1D-F-R TR | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 134FBGA |
| EDB4432BBBJ-1D-F-D | Micron Technology Inc | 5,000 | IC DRAM 4G PARALLEL 134FBGA |