| US1J M2G |
Taiwan Semiconductor |
5,000 |
DIODE GEN PURP 600V 1A DO214AC |
| US1J R3G |
Taiwan Semiconductor |
7,200 |
DIODE GEN PURP 600V 1A DO214AC |
| US1J R3G |
Taiwan Semiconductor |
8,312 |
DIODE GEN PURP 600V 1A DO214AC |
| US1J R3G |
Taiwan Semiconductor |
8,312 |
DIODE GEN PURP 600V 1A DO214AC |
| US1J-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 600V 1A SMA |
| US1J-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 600V 1A SMA |
| US1J-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 600V 1A SMA |
| US1J-13-F |
Diodes Incorporated |
105,000 |
DIODE GEN PURP 600V 1A SMA |
| US1J-13-F |
Diodes Incorporated |
105,030 |
DIODE GEN PURP 600V 1A SMA |
| US1J-13-F |
Diodes Incorporated |
105,030 |
DIODE GEN PURP 600V 1A SMA |
| US1J-E3/5AT |
Vishay Semiconductor/Diodes Division |
7,500 |
DIODE GEN PURP 600V 1A DO214AC |
| US1J-E3/5AT |
Vishay Semiconductor/Diodes Division |
12,709 |
DIODE GEN PURP 600V 1A DO214AC |
| US1J-E3/5AT |
Vishay Semiconductor/Diodes Division |
12,709 |
DIODE GEN PURP 600V 1A DO214AC |
| US1J-E3/61T |
Vishay Semiconductor/Diodes Division |
10,800 |
DIODE GEN PURP 600V 1A DO214AC |
| US1J-E3/61T |
Vishay Semiconductor/Diodes Division |
12,585 |
DIODE GEN PURP 600V 1A DO214AC |
