2SB906-Y(TE16L1,NQ

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA, 5V

Frequency - Transition :

9MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

1W

Series :

-

Supplier Device Package :

PW-MOLD

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 300mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

60V