PHX18NQ11T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12.5A (Tc)

Drain to Source Voltage (Vdss) :

110V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

31.2W (Tc)

Rds On (Max) @ Id, Vgs :

90mOhm @ 9A, 10V

Series :

TrenchMOS™

Supplier Device Package :

TO-220F

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA